Samsung Samples Industry's First 2Gbit NAND Flash Memory Device Utilizing 90-Nanometer Process Technology
(EMAILWIRE.COM, September 16, 2002 ) Samsung's 2Gbit device neatly placed in a Quad Die Package instantly generates an 8Gbit-capacity device that can store 80minutes of DVD quality video data. Thus, making the ultra-high-density NAND Flash memory a potential replacement for small-capacity hard disk drives and magnetic tapes, which are the main storage medium for digital camcorders and digital audio players. Using NAND Flash memory to store data allows manufacturers to design smaller, more lightweight products with extended battery life and enhanced performance.
"The digital photography and digital audio markets have an insatiable demand for portable storage capacity," said Dr. Chang Gyu Hwang, president of Samsung Electronics Memory Division. "Samsung's ongoing research and development in NAND Flash technology will ensure that customers have the high-capacity, solid-state storage they need for future generations of digital imaging and audio devices."
Samsung is the industry's first manufacturer to apply 90-nanometer process technology to a Flash memory device, ushering in the era of ultra-high-capacity non-volatile memory technology. The 2Gb device's cutting-edge, 0.05 µm2 design rule is half the minimum cell size found in other NAND Flash memory chips. The ultra high capacity device can make for an affordable 256 MByte USB Flash drive, expediting the replacement of the floppy drive and zip drive combination.
Samsung's new NAND Flash memory device has been designed for production on the company's existing fabrication lines, eliminating the need for additional facilities investments. The utilization 90-nanometer process technology greatly reduces manufacturing cost, enabling Samsung to produce the world's highest capacity 2Gb NAND Flash memory device while remaining the industry's competitive price leader.
Samsung's 2Gbit Flash memory utilizes a novel SSA-STi (Sacrificial Self Align Shallow Trench isolation) for the isolation technology developed to improve cell data storage reliability, which was considered most challenging at sub-100nm process. This technology breakthrough has enabled Samsung to develop the 2Gb NAND Flash memory device a year earlier than planned.
Nand Flash memory is the fastest-growing segment of the semiconductor industry. According to Semico Research Corporation, the bit-growth in the data storage market is expected to show over 107 percent growth by 2005.
About Samsung Electronics
Samsung Electronics Co. Ltd. is a global leader in semiconductor, telecommunication, and digital convergence technology. Samsung Electronics employs approximately 64,000 people in 89 offices in 47 countries. Samsung Electronics is the world's largest producer of memory chips, Smart Card Chips, Display Driver ICs, TFT-LCDs, CDMA mobile phones, monitors and VCRs. Samsung Electronics consists of four main business units: Digital Media Network, Device Solution Network, Telecommunication Network and Digital Appliance Network Businesses. For more information, please visit the web site, www.samsungelectronics.com
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Produced for Samsung Electronics Co.
Contact:
Chris Goodhart
Director, Marketing Communications
Samsung Semiconductor
Tel. 408-544-4122
cgoodhart@ssi.samsung.com
---------------
"The digital photography and digital audio markets have an insatiable demand for portable storage capacity," said Dr. Chang Gyu Hwang, president of Samsung Electronics Memory Division. "Samsung's ongoing research and development in NAND Flash technology will ensure that customers have the high-capacity, solid-state storage they need for future generations of digital imaging and audio devices."
Samsung is the industry's first manufacturer to apply 90-nanometer process technology to a Flash memory device, ushering in the era of ultra-high-capacity non-volatile memory technology. The 2Gb device's cutting-edge, 0.05 µm2 design rule is half the minimum cell size found in other NAND Flash memory chips. The ultra high capacity device can make for an affordable 256 MByte USB Flash drive, expediting the replacement of the floppy drive and zip drive combination.
Samsung's new NAND Flash memory device has been designed for production on the company's existing fabrication lines, eliminating the need for additional facilities investments. The utilization 90-nanometer process technology greatly reduces manufacturing cost, enabling Samsung to produce the world's highest capacity 2Gb NAND Flash memory device while remaining the industry's competitive price leader.
Samsung's 2Gbit Flash memory utilizes a novel SSA-STi (Sacrificial Self Align Shallow Trench isolation) for the isolation technology developed to improve cell data storage reliability, which was considered most challenging at sub-100nm process. This technology breakthrough has enabled Samsung to develop the 2Gb NAND Flash memory device a year earlier than planned.
Nand Flash memory is the fastest-growing segment of the semiconductor industry. According to Semico Research Corporation, the bit-growth in the data storage market is expected to show over 107 percent growth by 2005.
About Samsung Electronics
Samsung Electronics Co. Ltd. is a global leader in semiconductor, telecommunication, and digital convergence technology. Samsung Electronics employs approximately 64,000 people in 89 offices in 47 countries. Samsung Electronics is the world's largest producer of memory chips, Smart Card Chips, Display Driver ICs, TFT-LCDs, CDMA mobile phones, monitors and VCRs. Samsung Electronics consists of four main business units: Digital Media Network, Device Solution Network, Telecommunication Network and Digital Appliance Network Businesses. For more information, please visit the web site, www.samsungelectronics.com
---------------
Produced for Samsung Electronics Co.
Contact:
Chris Goodhart
Director, Marketing Communications
Samsung Semiconductor
Tel. 408-544-4122
cgoodhart@ssi.samsung.com
---------------
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This is a press release. Press release distribution and press release services by EmailWire.Com: http://www.emailwire.com/us-press-release-distribution.php.
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